Product overview
Description
This Power MOSFET series realized with STMicroelectronics unique STripFET™ process has specifically been designed to minimize on-resistance and gate charge. It is therefore suitable as primary side swich allowing high efficiencies.
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All features
- 100% avalanche tested
- Low intrinsic capacitances
- Gate charge minimized
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ST offers high-voltage MDmesh M6 & M9 STPOWER MOSFETs in a new compact, thermally efficient package: the TO-LL surface-mounted package offers high electrical and thermal efficiency, compactness and space saving in power conversion applications like SMPS, data centers and solar microinverters. Thanks to the additional Kelvin-source lead, designers can achieve better efficiency due to reduced turn-on/turn-off switching losses.